Hybrid Bonding
A three-dimensional integration technology that achieves electrical interconnection between wafers or dies through direct copper-to-copper contact and dielectric layer bonding, enabling interconnect pitch to be reduced to the micrometer or even sub-micrometer level.
Timeline (last 90 days)
Intel's hybrid bonding technology pushes connection pitch from the current production 25 micrometers to below 10 micrometers, and the lab has demonstrated reliability data at a 0.45-micrometer pitch.
Hybrid bonding is a three-dimensional integration technology that directly bonds two wafers or dies, achieving electrical interconnection through direct copper-to-copper contact and dielectric layer bonding, with interconnect pitch reducible from tens of micrometers to a few micrometers or even sub-micrometer levels.
All Facts (2)
Intel's hybrid bonding technology pushes connection pitch from the current production 25 micrometers to below 10 micrometers, and the lab has demonstrated reliability data at a 0.45-micrometer pitch.
50%UnverifiedHybrid bonding is a three-dimensional integration technology that directly bonds two wafers or dies, achieving electrical interconnection through direct copper-to-copper contact and dielectric layer bonding, with interconnect pitch reducible from tens of micrometers to a few micrometers or even sub-micrometer levels.
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